Preparation of Epitaxial Pb(Zr, Ti)O<sub>3</sub> Thin Films on MgO (100) Substrates by Dipping-Pyrolysis Process
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Epitaxial growth of Cu ( 100 ) and Pt ( 100 ) thin films on perovskite substrates Andrew
Pulsed laser deposition (PLD) has been used to grow epitaxially oriented thin films of Cu and Pt on (100)-oriented substrates of both SrTiO3 and LaAlO3. The resulting films have been characterized for their crystalline orientations using x-ray diffraction (XRD) and for their surface morphologies using atomic force microscopy (AFM). The diffraction results illustrated that purely epitaxial Cu(10...
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S. K. Arora,1,* Han-Chun Wu,1 R. J. Choudhary,1,† I. V. Shvets,1 O. N. Mryasov,2 Hongzhi Yao,3 and W. Y. Ching3 1Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College Dublin, Dublin 2, Ireland 2Seagate Research Center, Seagate Technology, 1251, Waterfront Place, Pittsburgh, Pennsylvania 15222, USA 3Department of Physics, University of Missour...
متن کاملAnomalous anisotropic magnetoresistance in epitaxial Fe3O4 thin films on MgO(100)
Studies of the angular dependence of the anisotropic magnetoresistance (AMR) are reported for epitaxial films of magnetite (Fe3O4) grown on MgO (001) and also for single crystals of magnetite. The characteristic feature of the AMR is a two-fold symmetry at temperatures above 200 K. As the samples are cooled below 200 K, an additional set of peaks appears. These become dominant at lower temperat...
متن کاملEpitaxial ternary RexMo1-xSi2 thin films on Si(100)
Reactive deposition epitaxy was used to synthesize thin layers of RexMo1 _ _x8i2 on Si(lOO). In the case of x= 1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 ( 1990) ]. In the case of x = 0, however, virtually no alignment of the MoSi2 and the s...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 1997
ISSN: 0914-5400,1882-1022
DOI: 10.2109/jcersj.105.952